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Picture of Kingston Technology KSM26SES8/8HD memory module 8 GB 1 x 8 GB DDR4 2666 MHz ECC
Picture of Kingston Technology KSM26SES8/8HD memory module 8 GB 1 x 8 GB DDR4 2666 MHz ECC
Picture of Kingston Technology KSM26SES8/8HD memory module 8 GB 1 x 8 GB DDR4 2666 MHz ECC

Kingston Technology KSM26SES8/8HD memory module 8 GB 1 x 8 GB DDR4 2666 MHz ECC

Kingston Technology KSM26SES8/8HD. Component for: Notebook, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 21, ECC
Manufacturer: Kingston Technology
SKU: 5950280
Manufacturer part number: KSM26SES8/8HD
GTIN: 0740617312119
MSRP: $67.00
$51.79
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Kingston's KSM26SES8/8HD is a 1G x 72-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 260-pin SODIMM uses gold contact fingers.
Kingston's KSM26SES8/8HD is a 1G x 72-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 260-pin SODIMM uses gold contact fingers.
Products specifications
Attribute nameAttribute value
Harmonized System (HS) code84733020
SPD profileY
Width2.74"
Height1.18"
Features
Internal memory typeDDR4
Memory clock speed2666 MHz
Memory form factor260-pin SO-DIMM
CAS latency21
Memory voltage1.2 V
Memory layout (modules x size)1 x 8 GB
Memory ranking1
Internal memory8 GB
Component forNotebook
ECCY
Buffered memory typeUnregistered (unbuffered)
Technical details
Sustainability certificatesRoHS
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
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Products specifications
Attribute nameAttribute value
Harmonized System (HS) code84733020
SPD profileY
Width2.74"
Height1.18"
Features
Internal memory typeDDR4
Memory clock speed2666 MHz
Memory form factor260-pin SO-DIMM
CAS latency21
Memory voltage1.2 V
Memory layout (modules x size)1 x 8 GB
Memory ranking1
Internal memory8 GB
Component forNotebook
ECCY
Buffered memory typeUnregistered (unbuffered)
Technical details
Sustainability certificatesRoHS
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Product tags
  • (92075)
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