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Picture of Kingston Technology KSM26SES8/16HC memory module 16 GB DDR4 2666 MHz ECC
Picture of Kingston Technology KSM26SES8/16HC memory module 16 GB DDR4 2666 MHz ECC
Picture of Kingston Technology KSM26SES8/16HC memory module 16 GB DDR4 2666 MHz ECC

Kingston Technology KSM26SES8/16HC memory module 16 GB DDR4 2666 MHz ECC

Kingston Technology KSM26SES8/16HC. Internal memory: 16 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 19, ECC
Manufacturer: Kingston Technology
SKU: 6466193
Manufacturer part number: KSM26SES8/16HC
GTIN: 0740617324747
MSRP: $125.00
$94.26
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Kingston's KSM26SES8/16HC is a 2G x 72-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 2G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 260-pin SODIMM uses gold contact fingers.
Kingston's KSM26SES8/16HC is a 2G x 72-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 2G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 260-pin SODIMM uses gold contact fingers.
Products specifications
Attribute nameAttribute value
JEDEC standardY
Harmonized System (HS) code84733020
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
SPD profileY
Programming power voltage (VPP)2.5 V
On-Die ECCY
BacklightN
Features
Internal memory typeDDR4
Memory clock speed2666 MHz
Memory form factor260-pin SO-DIMM
CAS latency19
Memory voltage1.2 V
Memory ranking1
Internal memory16 GB
ECCY
Buffered memory typeUnregistered (unbuffered)
Technical details
Sustainability certificatesRoHS
Data transmission
Supported data transfer ratesPC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
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Products specifications
Attribute nameAttribute value
JEDEC standardY
Harmonized System (HS) code84733020
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
SPD profileY
Programming power voltage (VPP)2.5 V
On-Die ECCY
BacklightN
Features
Internal memory typeDDR4
Memory clock speed2666 MHz
Memory form factor260-pin SO-DIMM
CAS latency19
Memory voltage1.2 V
Memory ranking1
Internal memory16 GB
ECCY
Buffered memory typeUnregistered (unbuffered)
Technical details
Sustainability certificatesRoHS
Data transmission
Supported data transfer ratesPC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
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